Title of article
Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation
Author/Authors
Masaki Kurokiba، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
16
From page
1052
To page
1067
Abstract
We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design.
This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-
Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on
the global existence.
© 2007 Elsevier Inc. All rights reserved.
Keywords
Hardy–Littlewood–Sobolev inequality , semiconductor device , Drift-diffusion model , Elliptic–parabolic equations , Lp spaces , Global solution , A unique time local solution , Positivesolution , Local well-posedness , The initial boundary value problem
Journal title
Journal of Mathematical Analysis and Applications
Serial Year
2008
Journal title
Journal of Mathematical Analysis and Applications
Record number
937053
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