Title of article
CuInS2 based thin film photovoltaics
Author/Authors
R. Scheer a، نويسنده , , *، نويسنده , , R. Klenk a، نويسنده , , J. Klaer a، نويسنده , , I. Luck b، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
8
From page
777
To page
784
Abstract
A fabrication process for CuInS2 thin film solar cells, based on sulfurization of Cu/In bilayers, is described. The
process is investigated by in situ energy dispersive X-ray diffraction for phase identification as a function of process
time. It is found that Raman spectroscopy is very convenient and reliable in assessing the quality of CuInS2 produced
by this sequential process. Good quality CuInS2 films efficiently collect charge carriers generated by the incident sunlight.
The solar-to-electric conversion efficiency limitations of state-of-the-art CuInS2 based devices are discussed using
a comparison with device simulation. The module design is laid down and arguments for the up-scaling potential of this
new type of solar cell are presented.
2004 Elsevier Ltd. All rights reserved.
Keywords
quality assurance , Growth monitoring , CuInS2 , Solar cell , Thin film
Journal title
Solar Energy
Serial Year
2004
Journal title
Solar Energy
Record number
939401
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