Influence of the growth parameters of p-CdTe thin films on the performance of Au–Cu/p-CdTe/n-CdO type solar cells

R.F. sputter deposition of Sb doped CdTe thin films was carried out with targets containing different amounts of antimony (CT: 0, 2.5, 10 and 20 at.%). The substrates were kept at different temperatures (Ts) of 200, 275, 350 and 450 C. Three different argon pressure values: 2.5, 5 and 15 mTorr were used. The lowest dark resistivity (q) at room temperature (RT) was 9.0 · 105 X cm, which is one of the lowest values reported in the literature for Sb doped CdTe. Highly transparent ( 90%) and conductive (q = 3.7 · 10 4 X cm) F doped CdO (n-type) thin films, prepared at room temperature by the sol–gel method, were employed as window and top-contact. The configuration of the fabricated solar cell was (Au–Cu)/p-CdTe/n-CdO/glass. Open-circuit voltage (Voc) and short-circuit current density (Jsc) at room temperature have the highest values for high Ts, low Pg and CT = 10 at.%. Despite the fact that Voc and Jsc are lower than those reported in the literature, we think this work is useful as a basis for the search of more competitive CdTe/ CdO based PV devices. 2005 Elsevier Ltd. All rights reserved.