Title of article
Growth and characterization of CuInxGa1 xTe2 used for photovoltaic conversion
Author/Authors
M. Benabdeslem a، نويسنده , , *، نويسنده , , L. Bechiri a، نويسنده , , N. Benslim a، نويسنده , , L. Mahdjoubi a، نويسنده , , E.B. Hannech a، نويسنده , , M. Zouiti a، نويسنده , , G. Nouet، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
5
From page
196
To page
200
Abstract
Bulk and thin films of CuIn0.75Ga0.25Te2 have been grown using respectively the sealed quartz ampoule and the flash
evaporation techniques. X-ray diffraction results showed that the semiconductor has the chalcopyrite structure. The gaps
of the materials were determined from optical measurements and found to be 0.99 and 1.14 eV, respectively for bulk and
annealed films. Photoluminescence data showed a broad emission localised at 1.05 eV.
2005 Elsevier Ltd. All rights reserved
Keywords
INGOT , Fusion , Lash evaporation , Chalcopyrite , film , defect , Photoluminescence
Journal title
Solar Energy
Serial Year
2006
Journal title
Solar Energy
Record number
939586
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