• Title of article

    The nature of mobile hydrogen in a-Si:H—Electrochemical studies

  • Author/Authors

    Katar?´na Gmucova´ a، نويسنده , , *، نويسنده , , Vojtech Na´daz?dy a، نويسنده , , Rudolf Durny´ b، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    694
  • To page
    700
  • Abstract
    Electrochemical studies of both the a-Si:H based metal/oxide/semiconductor structures and a-Si:H modified Pt electrode as a part of two-electrode cell compartment with electrolyte were performed to obtain information on the nature of mobile hydrogen in a-Si:H. We assume, that the complex formed by a hydrogen molecule and a silicon dangling bond (the origin of Dh states) provides for mobile hydrogen. Information on the process of electron selfexchange (hopping) in a-Si:H driven by diffusion in the presence of a concentration gradient of redox centers is obtained. The capability of the electrochemical methods for studying the role of hydrogen in degradation of a-Si:H caused by bias annealing and/or illumination is demonstrated. Also, it was shown that because of the unique electrocatalytic features of the a-Si:H modified Pt electrode, the latter can act as a ‘‘programmable’’ and selective sensor of heavy metal ions and/or metal complexes. 2006 Elsevier Ltd. All rights reserved
  • Keywords
    Gap states , Dangling bond , Hydrogen diffusion , a-Si:H , Semiconducting electrode , Redox centers
  • Journal title
    Solar Energy
  • Serial Year
    2006
  • Journal title
    Solar Energy
  • Record number

    939638