• Title of article

    The n-CdIn2Se4/p-CdTe heterojunction solar cells

  • Author/Authors

    V.M. Nikale، نويسنده , , S.S. Shinde، نويسنده , , A.R. Babar، نويسنده , , C.H. Bhosale *، نويسنده , , K.Y. Rajpure *، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2011
  • Pages
    7
  • From page
    1336
  • To page
    1342
  • Abstract
    The n-CdIn2Se4/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn2Se4 thin films using spray pyrolysis on to p-CdTe. Current density–voltage and capacitance–voltage measurements were performed to determine the electrical properties of the structures. The capacitance–voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (Rs and Rsh), fill factor (FF) and efficiency (g) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (g) of about 0.55% and 0.67%. 2011 Elsevier Ltd. All rights reserved
  • Keywords
    Heterojunction cells , Photovoltaic conversion , Spray pyrolysis , Mott–Schottky plot
  • Journal title
    Solar Energy
  • Serial Year
    2011
  • Journal title
    Solar Energy
  • Record number

    940687

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=940687