Title of article
Fabrication and characterization of amorphous In–Zn–O/SiOx/ n-Si heterojunction solar cells
Author/Authors
Hau-Wei Fang a، نويسنده , , Shiu-Jen Liu b، نويسنده , , ?، نويسنده , , Tsung-Eong Hsieh، نويسنده , , Jenh-Yih Juang c، نويسنده , , Jang-Hsing Hsieh d، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2011
Pages
6
From page
2589
To page
2594
Abstract
Amorphous In–Zn–O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique
to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150 C with various laser power (250–500 mJ/pulse)
exhibit low resistivity (2–3 10 3 X cm) and high transparency ( 80%) in the visible wavelength range. The highest conversion efficiency
of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100 mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, shortcircuit
current density and fill factor of the best device are 0.24 V, 28.4 mA/cm2 and 33.6%, respectively.
2011 Elsevier Ltd. All rights reserved
Keywords
Photovoltaic characteristics , Semiconductor–insulator–semiconductor solar cell , Pulsed laser deposition , Amorphous In–Zn–O film
Journal title
Solar Energy
Serial Year
2011
Journal title
Solar Energy
Record number
940797
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