• Title of article

    Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

  • Author/Authors

    Aqing Chen a، نويسنده , , b، نويسنده , , Kaigui Zhu a، نويسنده , , ?، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    393
  • To page
    397
  • Abstract
    The p-type a-Si:H/n-type c-Si (P+ a-Si:H/N+ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P+ a-Si:H/N+ c-Si solar cells. With the optimized parameters set, the P+ a- Si:H/N+ c-Si solar cell reaches a high efficiency (g) up to 21.849% (FF: 0.866, VOC: 0.861 V, JSC: 29.32 mA/cm2). 2011 Elsevier Ltd. All rights reserved.
  • Keywords
    TCO work function , Solar cells , Photovoltaics , a-Si/c-Si heterojunction
  • Journal title
    Solar Energy
  • Serial Year
    2012
  • Journal title
    Solar Energy
  • Record number

    940884