Title of article
Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency
Author/Authors
Aqing Chen a، نويسنده , , b، نويسنده , , Kaigui Zhu a، نويسنده , , ?، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
5
From page
393
To page
397
Abstract
The p-type a-Si:H/n-type c-Si (P+ a-Si:H/N+ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency
and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated.
The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction
cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be
large enough in order to achieve high conversion efficiency of P+ a-Si:H/N+ c-Si solar cells. With the optimized parameters set, the P+ a-
Si:H/N+ c-Si solar cell reaches a high efficiency (g) up to 21.849% (FF: 0.866, VOC: 0.861 V, JSC: 29.32 mA/cm2).
2011 Elsevier Ltd. All rights reserved.
Keywords
TCO work function , Solar cells , Photovoltaics , a-Si/c-Si heterojunction
Journal title
Solar Energy
Serial Year
2012
Journal title
Solar Energy
Record number
940884
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