Title of article
CdS thin film post-annealing and Te–S interdiffusion in a CdTe/CdS solar cell
Author/Authors
Xavier Mathew a، نويسنده , , ?، نويسنده , , Jose S. Cruz b، نويسنده , , David R. Coronado a، نويسنده , , Aduljay R. Milla´n a، نويسنده , , Gildardo C. Segura a، نويسنده , , Erik R. Morales، نويسنده , , c، نويسنده , , Omar S. Mart?´nez a، نويسنده , , c، نويسنده , , Christian C. Garcia a، نويسنده , , Eduardo P. Landa a، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
6
From page
1023
To page
1028
Abstract
Small area CdTe/CdS solar cells were fabricated using chemical bath deposited CdS and CSS deposited CdTe thin films to investigate
the interface properties related to the CdS processing. The effect of post deposition annealing of CdS on the junction properties and the
possible interdiffusion at the interface is discussed. The hypothesis of hardening of CdS due to annealing against the diffusion of “S” and
“Te” is discussed using the quantum efficiency data in the blue and red regions. Devices prepared using as-deposited CdS films exhibited
evidences of higher “S” and “Te” diffusion compared to devices made using CdS films annealed in oxygen. The maximum efficiency of the
devices used in this study was 9.8%.
2011 Elsevier Ltd. All rights reserved
Keywords
CSS , CdS annealing , CdTe/CdS , Vapor chloride treatments , Quantum efficiency
Journal title
Solar Energy
Serial Year
2012
Journal title
Solar Energy
Record number
940947
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