Author/Authors :
Tara Dhakal a، نويسنده , , ?، نويسنده , , Abhishek S. Nandur a، نويسنده , , Rachel Christian a، نويسنده , , Parag Vasekar a، نويسنده , , Seshu Desu a، نويسنده , , 1، نويسنده , ,
Charles Westgate a، نويسنده , , D.I. Koukis b، نويسنده , , D.J. Arenas c، نويسنده , , D.B. Tanner b، نويسنده ,
Abstract :
We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The
results show that the films have 80–90% transmittance in the visible region and good transmittance in the infrared. To our knowledge,
this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500–5000 nm. Following annealing,
an optimal sheet resistance of 25 X/h was obtained for a 575 nm thick film with a carrier density of 2.4 1020 cm 3 without compromising
the transmittance in the visible regime.
2012 Elsevier Ltd. All rights reserved.
Keywords :
Aluminum-doped zinc oxide , Transmittance of AZO , Transparent conducting oxide , IR transmittance , Atomic layer deposition
