Title of article
Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system
Author/Authors
Tara Dhakal a، نويسنده , , ?، نويسنده , , Abhishek S. Nandur a، نويسنده , , Rachel Christian a، نويسنده , , Parag Vasekar a، نويسنده , , Seshu Desu a، نويسنده , , 1، نويسنده , , Charles Westgate a، نويسنده , , D.I. Koukis b، نويسنده , , D.J. Arenas c، نويسنده , , D.B. Tanner b، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
7
From page
1306
To page
1312
Abstract
We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The
results show that the films have 80–90% transmittance in the visible region and good transmittance in the infrared. To our knowledge,
this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500–5000 nm. Following annealing,
an optimal sheet resistance of 25 X/h was obtained for a 575 nm thick film with a carrier density of 2.4 1020 cm 3 without compromising
the transmittance in the visible regime.
2012 Elsevier Ltd. All rights reserved.
Keywords
Aluminum-doped zinc oxide , Transmittance of AZO , Transparent conducting oxide , IR transmittance , Atomic layer deposition
Journal title
Solar Energy
Serial Year
2012
Journal title
Solar Energy
Record number
940974
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