Title of article :
The study of preparation and photoelectrical properties
of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films
for hydrogen production
Author/Authors :
Edita Garskaite a، نويسنده , , Guan-Ting Pan b، نويسنده , , Thomas C.-K. Yang a، نويسنده , , b، نويسنده , , ?، نويسنده , , Sheng-Tung Huang، نويسنده , , Aivaras Kareiva، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2012
Abstract :
Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and
photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the
tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48–1.54 eV and
2.38 1018–9.38 1019, respectively. The maximum photocurrent density of samples with a potential of 1.0 V vs. a Pt electrode
was found to be 8.58 mA/cm2 with the largest hydrogen production capability of 33.26 lmol/cm2 under illumination using a 300 W
Xe lamp system.
2012 Elsevier Ltd. All rights reserved
Keywords :
Photocatalysts , Electrochemical performance , Optical properties , CuInS2 crystalline
Journal title :
Solar Energy
Journal title :
Solar Energy
