Superconducting tunnel junction structures designed for qubit realizations

In view of future macroscopic quantum experiments, we have fabricated prototypes of charge qubits (with tunable Josephson coupling and capacitive gate) provided with capacitively coupled readout single-electron transistor electrometers. The devices are prepared by electron beam direct-writing in conjunction with material deposition by sputtering. All leads are made of Al, and the AlO/sub x/ tunnel barriers are generated by local thermal oxidizing of the surface of the base striplines. The island electrodes are made of Al or Nb in a subsequent deposition step. In the case of Nb it is suitable to protect the barriers by a thin sputtered Al film first. The small-area (100 nm*100 nm) tunnel junctions have capacitances in the order of a few 10/sup -16/ F; their resistances can be adjusted in a wide range from k(omega) to M(omega) with an on-chip spread of less than 10%. The (double) superconducting gap energy was determined to be about 0.4 meV for Al and 1.4 meV for Nb, respectively. Measuring the so-called Coulomb staircase, we have demonstrated the operation of both qubit boxes and sub-e electrometers.