Title of article
Numerical analysis of DAEs from coupled circuit and semiconductor simulation Original Research Article
Author/Authors
Monica Selva Soto، نويسنده , , Caren Tischendorf، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
18
From page
471
To page
488
Abstract
In this work we are interested in the numerical solution of a coupled model of differential algebraic equations (DAEs) and partial differential equations (PDEs). The DAEs describe the behavior of an electrical circuit that contains semiconductor devices and the partial differential equations constitute drift-diffusion equations modelling the semiconductor devices in the circuit.
After space discretization using a finite element method, the coupled system results in a differential-algebraic system with a properly stated leading term. We investigate the structure and the properties of this DAE system. In particular, we develop structural criteria for the DAE index. This is of basic interest since DAE properties like stability, existence and uniqueness of solutions depend strongly on its index.
Journal title
Applied Numerical Mathematics
Serial Year
2005
Journal title
Applied Numerical Mathematics
Record number
942407
Link To Document