Title of article :
Numerical analysis of DAEs from coupled circuit and semiconductor simulation Original Research Article
Author/Authors :
Monica Selva Soto، نويسنده , , Caren Tischendorf، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
18
From page :
471
To page :
488
Abstract :
In this work we are interested in the numerical solution of a coupled model of differential algebraic equations (DAEs) and partial differential equations (PDEs). The DAEs describe the behavior of an electrical circuit that contains semiconductor devices and the partial differential equations constitute drift-diffusion equations modelling the semiconductor devices in the circuit. After space discretization using a finite element method, the coupled system results in a differential-algebraic system with a properly stated leading term. We investigate the structure and the properties of this DAE system. In particular, we develop structural criteria for the DAE index. This is of basic interest since DAE properties like stability, existence and uniqueness of solutions depend strongly on its index.
Journal title :
Applied Numerical Mathematics
Serial Year :
2005
Journal title :
Applied Numerical Mathematics
Record number :
942407
Link To Document :
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