Title of article
Investigation and Comparison Among Improvements in Biasing Technologies of CMOS Opamps
Author/Authors
Taghi Salarian، Mohammad نويسنده Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran , , Esmaeli، Abdolreza نويسنده , , Noori Shirazi، Yaser نويسنده Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran ,
Issue Information
روزنامه با شماره پیاپی 0 سال 2013
Pages
7
From page
2264
To page
2270
Abstract
In this paper, we present modifications to the constant-gm bias circuit and the Miller-lead compensation technique which eliminate or minimize some of their shortcomings. First, we demonstrate how parasitic pad capacitance can cause instability in the constant-gm bias circuit, and show that the trans conductance is constant only for specific bias conditions. Next, we suggest a new circuit topology that requires 75% less compensation capacitance to achieve stability. We also discuss problems with Miller-lead compensation that arise from temperature, process, and load variations. Finally, we present a new biasing technique to correct these problems, and, through simulation, demonstrate a 40° improvement in phase margin over load current variations.
Journal title
Technical Journal of Engineering and Applied Sciences (TJEAS)
Serial Year
2013
Journal title
Technical Journal of Engineering and Applied Sciences (TJEAS)
Record number
944242
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