Title of article :
Investigation and Comparison Among Improvements in Biasing Technologies of CMOS Opamps
Author/Authors :
Taghi Salarian، Mohammad نويسنده Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran , , Esmaeli، Abdolreza نويسنده , , Noori Shirazi، Yaser نويسنده Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran ,
Issue Information :
روزنامه با شماره پیاپی 0 سال 2013
Abstract :
In this paper, we present modifications to the constant-gm bias circuit and the Miller-lead compensation technique which eliminate or minimize some of their shortcomings. First, we demonstrate how parasitic pad capacitance can cause instability in the constant-gm bias circuit, and show that the trans conductance is constant only for specific bias conditions. Next, we suggest a new circuit topology that requires 75% less compensation capacitance to achieve stability. We also discuss problems with Miller-lead compensation that arise from temperature, process, and load variations. Finally, we present a new biasing technique to correct these problems, and, through simulation, demonstrate a 40° improvement in phase margin over load current variations.
Journal title :
Technical Journal of Engineering and Applied Sciences (TJEAS)
Journal title :
Technical Journal of Engineering and Applied Sciences (TJEAS)