Author/Authors :
Tavanazadeh، Parisa نويسنده M.Sc student, Islamic Azad University, Najaf Abad Branch, Isfahan, Iran , , Daghighi، Arash نويسنده Assistant Professor, Faculty of Engineering, Shahrekord University, Shahrekord, Iran , , Mahdavi Nasab، Homayoon نويسنده Assistant Professor, Faculty of Engineering, Islamic Azad University, Najaf Abad Branch, Isfahan, Iran ,
Abstract :
In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.
