• Title of article

    Effect of CMOS technology scaling on thermal management during burn-in

  • Author/Authors

    M.، Sachdev, نويسنده , , A.، Keshavarzi, نويسنده , , O.، Semenov, نويسنده , , A.، Vassighi, نويسنده , , C.F.، Hawkins, نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    -685
  • From page
    686
  • To page
    0
  • Abstract
    Burn-in is a quality improvement procedure challenged by the high leakage currents that are rapidly increasing with IC technology scaling. These currents are expected to increase even more under the new burn-in environments leading to higher junction temperatures, possible thermal runaway, and yield loss during burn-in. The authors estimate the increase in junction temperature with technology scaling. Their research shows that under normal operating conditions, the junction temperature is increasing 1.45*/generation. The increase in junction temperature under the burn-in condition was found to be exponential. The range of optimal burn-in voltage and temperature is reduced significantly with technology scaling.
  • Keywords
    Gene regulation , male reproductive tract , spermatid , testis , spermatogenesis
  • Journal title
    IEEE Transactions on Semiconductor Manufacturing
  • Serial Year
    2003
  • Journal title
    IEEE Transactions on Semiconductor Manufacturing
  • Record number

    95545