The control of channeling phenomenon

The dependence of depth profile on a tilt and twist angle was investigated with a resolution of 0.05 (degree) using a stencil mask ion implanter that has less than 0.1 (degree) parallelism of ion beam. Angular dependence of depth profiles obtained by secondary ion mass spectrometry (SIMS) shows the channeling phenomenon can be controlled using a highly controlled parallel ion beam. This means that if tilt angle is controlled with a resolution of less than 0.1 (degree), the variation caused by channeling phenomenon can be neglected. The threshold voltage data of n-type MOSFETs fabricated using a controlled parallel ion beam with resolution of less than 0.1 (degree) indicates that the variation is the same as that in the case of one fabricated using 7 (degree) implantation.