Author/Authors :
Yang، Jau-Yuann نويسنده , , K.، Benaissa, نويسنده , , D.، Crenshaw, نويسنده , , B.، Williams, نويسنده , , S.، Sridhar, نويسنده , , J.، Ai, نويسنده , , G.، Boselli, نويسنده , , Zhao، Song نويسنده , , Tang، Shaoping نويسنده , , S.، Ashburn, نويسنده , , P.، Madhani, نويسنده , , T.، Blythe, نويسنده , , N.، Mahalingam, نويسنده , , H.S.، Shichijo, نويسنده ,
Abstract :
The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-(mu)m Cu metal pitch, 0.1-(mu)m-Agatelength RF CMOS technology.
Keywords :
Navier-Stokes , Multigrid , Krylov , Newton , Non-linear
