Title of article
Strained-Si on Si/sub 1-x/Ge/sub x/ MOSFET mobility model
Author/Authors
F.، Gamiz, نويسنده , , J.B.، Roldan, نويسنده , , P.، Cartujo-Cassinello, نويسنده , , P.، Cartujo, نويسنده , , J.E.، Carceller, نويسنده , , A.، Roldan, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1407
From page
1408
To page
0
Abstract
A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. The model fits well experimental measurements.
Keywords
Multigrid , Navier-Stokes , Krylov , Non-linear , Newton
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95664
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