Title of article
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
Author/Authors
Cheng، Xu نويسنده , , J.K.O.، Sin, نويسنده , , Kang، Baowei نويسنده , , Feng، Chuguang نويسنده , , Wu، Yu نويسنده , , Liu، Xingming نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1421
From page
1422
To page
0
Abstract
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs.
Keywords
Navier-Stokes , Multigrid , Newton , Non-linear , Krylov
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95669
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