Title of article
Impurity profile effects of buffer layer on PT-IGBT characteristics
Author/Authors
Kim، Chung-Hee نويسنده , , Chung، Sang-Koo نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-512
From page
513
To page
0
Abstract
The effects of Gaussian impurity profiles in the p/sup +/ anode/n-buffer layer of PT-IGBTs on device characteristics are studied numerically and analytically. The results are compared with those from the uniform impurity profiles. A better tradeoff between the forward voltage drop and the turn-off time is found in the Gaussian impurity profile.
Keywords
Industrial organization , Biotechnology R&D
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95785
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