Title of article
A floating well method for exact capacitance-voltage measurement of nano technology
Author/Authors
J.Y.-C.، Sun, نويسنده , , Su، Hung-Der نويسنده , , Chiou، Bi-Shiou نويسنده , , Wu، Shien-Yang نويسنده , , Chang، Ming-Hsung نويسنده , , Lee، Kuo-Hua نويسنده , , Chen، Yung-Shun نويسنده , , Chao، Chih-Ping نويسنده , , See، Yee-Chaung نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1542
From page
1543
To page
0
Abstract
Small gate area with short gate length reduces the C-V distortion of ultrathin oxide devices, but results in high parasitic capacitance/total capacitance ratio. The floating well method can exclude the parasitic capacitance to obtain accurate inversion oxide thickness without using any dummy pattern. It is suitable for nano technology.
Keywords
Cretan Mediterranean diet , Ischaemic heart disease , folate , homocysteine
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95819
Link To Document