Channel width dependence of NMOSFET hot carrier degradation

The channel width dependence of hot carrier reliability on NMOSFETs from 0.4-(mu)m to 0.13-(mu)m technology has been studied at both I/sub b,peak/ and V/sub g/ = V/sub d/ conditions. Enhanced degradation on narrow width devices happens on most technologies. The I/sub b//I/sub d/ value and vertical electric field are proposed to be the reasons for enhanced degradation on narrow width NMOSFETs.