Title of article
Nitride-based LEDs with p-InGaN capping layer
Author/Authors
H.، Shu-Hung Chung, نويسنده , , C.H.، CHEN نويسنده , , S.J.، Chang, نويسنده , , Y.K.، Su, نويسنده , , P.C.، Chen, نويسنده , , P.C.، Chang, نويسنده , , Y.D.، Jhou, نويسنده , , S.M.، Wang, نويسنده , , B.R.، Luang, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2566
From page
2567
To page
0
Abstract
Nitride-based light-emitting diodes (LEDs) with Mg-doped In/sub 0.23/Ga/sub 0.77/N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mgdoped In/sub 0.23/Ga/sub 0.77/N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In/sub 0.23/Ga/sub 0.77/N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In/sub 0.23/Ga/sub 0.77/N capping layer was much larger, particularly at elevated temperatures.
Keywords
OBESITY , Genotype , Energy
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95866
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