Title of article
Lateral ion implant straggle and mask proximity effect
Author/Authors
R.، Mann نويسنده , , J.، Brown, نويسنده , , T.B.، Hook, نويسنده , , P.، Cottrell, نويسنده , , E.، Adler, نويسنده , , D.، Hoyniak, نويسنده , , J.، Johnson, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1945
From page
1946
To page
0
Abstract
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triplewell isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.
Keywords
spermatid , spermatogenesis , male reproductive tract , Gene regulation , testis
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95885
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