Author/Authors :
R.، Mann نويسنده , , J.، Brown, نويسنده , , T.B.، Hook, نويسنده , , P.، Cottrell, نويسنده , , E.، Adler, نويسنده , , D.، Hoyniak, نويسنده , , J.، Johnson, نويسنده ,
Abstract :
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triplewell isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.
Keywords :
spermatid , spermatogenesis , male reproductive tract , Gene regulation , testis
