Author/Authors :
S.، Chattopadhyay, نويسنده , , S.H.، Olsen, نويسنده , , A.G.، ONeill, نويسنده , , L.S.، Driscoll, نويسنده , , K.S.K.، Kwa, نويسنده , , A.M.، Waite, نويسنده , , Y.T.، Tang, نويسنده , , A.G.R.، Evans, نويسنده , , D.J.، Norris, نويسنده , , A.G.، Cullis, نويسنده , , D.J.، Paul, نويسنده , , D.J.، Robbins, نويسنده ,
Abstract :
Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs. A novel layer structure comprising Si/Si/sub 0.7/Ge/sub 0.3/ on an Si/sub 0.85/Ge/sub 0.15/ virtual substrate (VS) offers improved performance advantages and a strain-compensated structure. A high thermal budget process produces devices having excellent on/off-state drain-current characteristics, transconductance, and subthreshold characteristics. The virtual substrate does not require chemical-mechanical polishing and the same performance enhancement is achieved with and without a titanium salicide process.
Keywords :
spermatid , spermatogenesis , testis , male reproductive tract , Gene regulation
