Global simulation of a silicon Czochralski furnace in an axial magnetic field

Control of melt flow in crystal growth process by application of the magnetic field is a practical technique for silicon single crystals. In order to understand the influence of axial magnetic field on the silicon melt flow and oxygen transport in a silicon Czochralski (Cz) furnace, a set of global numerical simulations was conducted using the finite-element method for the magnetic field strength from 0 to 0.3 T, the crystal rotation rates from 0 to 30 rpm and the crucible counter-rotation rates from 0 to ?15 rpm. It was assumed that the flow was axisymmetric laminar in both the melt and the gas, the melt was incompressible and a constant temperature was imposed on the outer wall of the Cz furnace. The results indicate significantly different flow patterns, thermal and oxygen concentration fields in the melt pool when a uniform axial magnetic field is applied.