Title of article
Application of BEM to high-voltage junction termination
Author/Authors
Chen، Guofu نويسنده , , Wu، Zilu نويسنده , , Gao، Yumin نويسنده , , Luo، Jinsheng نويسنده , , Hou، Xun نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-1217
From page
1218
To page
0
Abstract
Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of highvoltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method
Keywords
Hydrograph
Journal title
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Serial Year
2001
Journal title
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Record number
98179
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