Title of article :
Silicification of bamboo (Phyllostachys heterocycla Mitf.) root and leaf
Author/Authors :
Lux، Alexander نويسنده , , Luxova، Miroslava نويسنده , , Abe، Jun نويسنده , , Morita، Shigenori نويسنده , , Inanaga، Shinobu نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-84
From page :
85
To page :
0
Abstract :
Bamboo is a silicon accumulating plant. In leaves, the major place of silicon (Si) deposition is the epidermis, with the highest concentration of Si in silica cells. In bamboo roots, the deposition of Si is found only in endodermal cell walls. The silicification of leaves and roots was examined in the economically important bamboo plant Phyllostachys heterocycla, using an environmental scanning electron microscope coupled with X-ray microanalysis, as well as gravimetric quantification. The content of Si on a dry weight basis measured by gravimetric quantification was 7.6% in leaves and 2.4% in roots, respectively. Moreover, quantification of EDX data showed high Si impregnation of the inner tangential endodermal walls. Si content in this part of the root endodermal cell walls was even higher than that in the outer leaf epidermal walls, where conspicuous deposition of Si often occurs in grass plants.
Keywords :
bamboo , environmental scanning electron microscope (ESEM) , X-ray microanalysis , endodermis , silicon deposition
Journal title :
PLANT AND SOIL
Serial Year :
2003
Journal title :
PLANT AND SOIL
Record number :
98864
Link To Document :
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