• Title of article

    Atomic layer epitaxy growth of doped zinc oxide thin films from organometals

  • Author/Authors

    Vesa Lujala، نويسنده , , Jarmo Skarp، نويسنده , , Markku Tammenmaa، نويسنده , , Tuomo Suntola، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1994
  • Pages
    7
  • From page
    34
  • To page
    40
  • Abstract
    An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120–350°C. Growth rate varied from 0.5 to 2.5 Å/cycle, depending on precursors and substrate temperatures used. With optimum doping, sheet resistances of 10 Ω/□ with 1 μm thick films were obtained.
  • Journal title
    Applied Surface Science
  • Serial Year
    1994
  • Journal title
    Applied Surface Science
  • Record number

    989775

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=989775