Abstract :
This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of ∽ 480°C compared with conventional high temperature treatment at ∽ 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.
