Abstract :
Molecular layer epitaxy (MLE) was applied for fabrication of static induction transistors (SIT) with electrical source-drain distances from 170 Å (metallurgical 90 Å) to 1000 Å. Channels-gates were regrown selectively under an overchanging SiNx mask in a self-alignment way on sidewalls of ex-situ etched grooves. Characteristics of the SITs reveal dependence of properties of the crystal regrown on a sidewall on the sidewall orientation. 170 Å (90 Å) transistors with gate interfaces parallel to the 〈011̄〉 direction are normally-off while the transistors with gates parallel to 〈011〉 are normally- on.
