Title of article :
Growth of In2S3 thin films by atomic layer epitaxy
Author/Authors :
T. Asikainen، نويسنده , ,
M. Ritala، نويسنده , ,
M. Leskel?، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1994
Abstract :
In2S3 films were deposited by ALE using InCl3 and H2S as precursors. The films were characterized by means of XRD, RBS, SEM and by optical and electrical measurements. The highest growth rate obtained was 1.4 Å/cycle at 300°C. The films were polycrystalline β-In2S3 having a band gap of 2.3 eV.
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
