Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes

We have grown GaxIn1-xAs and GaxIn1-xAs/AlAs heterostructures by flow modulation epitaxy (FME) for the first time. GaxIn1-xAs on InP growth was investigated in the temperature range between 450 and 650°C. Photoluminescence and electrical characterization revealed that high quality of the FME grown GaxIn1-xAs layers can be achieved. Resonant tunneling diodes (RTD) were fabricated from FME-grown GaxIn1-xAs/AlAs double barrier structures. The best room temperature peak-to-valley ratio of 4.3 demonstrates that this technique provides heterointerfaces of device quality. Good lateral homogeneity over the wafer was also achieved.