Author/Authors :
N. Kano، نويسنده , ,
S. Hirose، نويسنده , ,
K. Hara، نويسنده , ,
J. Yoshino1، نويسنده , ,
H. Munekata، نويسنده , ,
H. Kukimoto، نويسنده ,
Abstract :
We have successfully achieved atomic layer epitaxy (ALE) of AlAs with low carbon contents (1017-1018 cm-3) by using ethyldimethylamine alane as a novel aluminum source. This new source provides several interesting ALE behaviors characterized by a very wide ALE temperature window (250–650°C) and the presence of self-limiting growth modes of two- and three-monolayers as well as one-monolayer.
