Control of the etching reaction of digital etching using tunable UV laser irradation

Control of etching reaction in digital etching of GaAs(001) using a tunable UV laser irradiation has been studied for the purpose of atomic layer etching. It is found that the As-containing products are controlled by the surface coverage of Cl2 and the Ga-containing products are controlled by the incident wavelength. Results of the present work give us the possibility of the ideal layer-by-layer-controlled atomic layer etching as one of the promising future device technologies.