Laser-induced selective deposition of NiP alloy on silicon

Selective deposition of NiP alloy thin film on p-type silicon was obtained in a hypophosphite-based conventional electroless nickel plating solution at ambient temperature under laser irradiation. Composition and properties of the deposits were investigated using SEM, XPS, AES and RBS techniques. The presence of HF and a sufficient power density are necessary for deposition of a detectable film. Crystalline NiP alloy deposits are formed and a diffusion of elements at the interface is found. The mechanism involved in the deposition process is also discussed. The NiP deposits are in Schottky barrier contact with p-type silicon.