Author/Authors :
A. van Veen، نويسنده , , H. Schut، نويسنده , , M. Clement، نويسنده , , J.M.M. de Nijs، نويسنده , , A. Kruseman، نويسنده , , M.R. Ijpma، نويسنده ,
Abstract :
The modelling and fitting program VEPFIT has been employed in recent years for resolving defect depth profiles and depth structures of deposited layers. Recent activities concerning program development include the testing of a new model of MOS systems for implementation into VEPFIT and a study into decomposition of Doppler-broadened photo-peaks. Further methods are proposed using VEPFIT for analysis of lifetime measurements and for modelling of positron transport with multi-energy groups.
