Author/Authors :
S.M. Pimenov، نويسنده , , G.A. Shafeev، نويسنده , , A.A. Smolin، نويسنده , , V.I. Konov، نويسنده , , B.K. Vodolaga، نويسنده ,
Abstract :
A laser-induced forward transfer (LIFT) technique is used for area-selective prenucleation of Si substrates with ultra-fine diamond powder for subsequent diamond film deposition via a conventional CVD process. The influence of the laser parameters (wavelength, energy density, etc.) on the features of the ablation-deposition process is experimentally studied with the aim of improving the spatial selectivity of diamond patterning.
