UV light irradiation effects on nucleation during chemical vapor deposition of Al films

Photo-induced effects on nucleation were compared on various surfaces during chemical vapor deposition of Al thin films, using dimethylaluminum hydride. The emission around 160 nm from a deuterium lamp was more effective for nucleation on a H-terminated Si surface than the emission around 240 nm. The catalytic reaction of a Ti layer for nucleation was promoted by irradiation, while the UV light suppressed nucleation on a Pd layer.