Photoassisted growth of II–VI semiconductor films

Photoassisted growth of II–VI semiconductor films in MOVPE, MBE, and MOMBE has been found to be promising for high quality epilayers and effective doping, despite the different growth techniques. Association of electrons and/or holes generated at the growth surface under above band gap photoirradiation seems to be a fundamental process responsible to many of the unique features. For the application of II–VI semiconductors to various optoelectronic devices from far infrared to ultraviolet spectral regions, the photoassisted growth may be one of the key techniques.