Author/Authors :
Satoshi Sugahara، نويسنده , , Masaru Kadoshima، نويسنده , ,
Takuya Kitamura، نويسنده , , Sigeru Imai، نويسنده , ,
Masakiyo Matsumura، نويسنده ,
Abstract :
Atomic layer epitaxy of germanium has been demonstrated successfully by alternating exposures of atomic hydrogen, which acts as a reactant for extracting hydrocarbon from the surface, and of dimethylgermane as a self-limiting molecular precursor. The ideal growth rate of one monolayer per cycle has been achieved with a wide ALE temperature window between 420°C and 528°C.
