A photoemission study of electron states in Sb-ion implanted TiO2(110)

Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region. The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s– ;5p hybrid orbital localised on surface Sb ions.