Title of article
A photoemission study of electron states in Sb-ion implanted TiO2(110)
Author/Authors
A.E. Taverner، نويسنده , , Daniel A. Gulino، نويسنده , , R.G. Egdell، نويسنده , , T.J. Tate، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
5
From page
383
To page
387
Abstract
Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region. The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s– ;5p hybrid orbital localised on surface Sb ions.
Journal title
Applied Surface Science
Serial Year
1995
Journal title
Applied Surface Science
Record number
990226
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