XPS investigation of electron beam effects on a trimethylsilane dosed Si(100) surface

A trimethylsilane covered Si(100) surface at temperature −120°C was bombarded by 1.3 keV electrons for various time intervals. The core level Si2p and C1s electrons were studied after each electron bombardment by use of X-ray photoelectron spectroscopy. The spontaneous dissociation of TMSiH on the Si(100) surface was observed judging from the formation of CC bonds. The CC and CSi bonds increased initially and then saturated after ∼ 20 min of electron exposure. The binding energy of C1s in CC and CSi bonds and that of Si2p in SiC bonds showed an opposite behavior under electron irradiation. The former increased and the latter decreased at the beginning of the irradiation and then both increase rate and decrease rate reduced. From the previous results of electron stimulated desorption and temperature programmed desorption, and the variation of electron density distribution around C and Si, it is concluded that the de-hydrogenation in CHn and SiCHm bonds was induced and new SiC and CSi bonds were formed by electron irradiation on TMSiH covered Si(100) surface.