Author/Authors :
N.L. Dmitruk، نويسنده , , E.V. Basiuk، نويسنده , , G.Ya. Kolbasov، نويسنده , , O.A. Yakubtsov، نويسنده , , I.A. Molchanovskii، نويسنده , , T.A. Taranets، نويسنده ,
Abstract :
Morphology and atomic composition of anisotropically etched surfaces of InP have been studied by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). The photoelectric properties and the voltage-capacitance characteristics of the InP-electrolyte interface have been investigated. A correlation between these properties and the surface morphology and atomic composition was shown. The highest photosensitivity was found for flat stoichiometric surfaces with an optimal transition layer between the oxide and the semiconductor and a low content of In in its oxide.
