Comparison of CoSi2 interconnection lines on crystalline and noncrystalline silicon fabricated by writing focused ion beam implantation

A focused beam of Co+ ions has been used to produce CoSi2 interconnects by means of ion beam synthesis. Investigations have been performed using polysilicon, amorphous and crystalline silicon substrates. The influence of implantation dose and annealing temperature on the resistivity has been studied. For room temperature implantation and annealing at 600°C for 1 h, a resistivity of about 60 μΩ · cm has been obtained independent of the substrate type. The CoSi2 layers have been found to be stable up to 700°C. CoSi2 interconnects have been fabricated on the sloped walls of 200 μm deep anisotropically etched grooves using a dynamic focus control of the focused ion beam.