Angular dependence of the magnetoresistance of TiSi2 single crystals

We measured the transverse magnetoresistance Δϱϱ of good quality TiSi2 single crystals at low temperatures (4.2≤T≤112 K) in magnetic fields up to 7.8 Tesla. Single crystals were produced by a modified Czochralski pulling technique and they have low residual resistivity (typically ϱ(4.2 K) = 0.15 μΩ·cm) and high residual resistance ratio (typically RRR > 50). The angular dependence of magnetoresistance shows either minima or maxima when the magnetic field is parallel to the principal crystallographic axes. At high fields (B > 1 T). we found that the magnetoresistance has a magnetic field dependence weaker than the B2 law expected for compensated metals. At 7.8 T, the values of ωcτ obtained are of the order of unity. The Kohler scaling rule is observed within three orders of magnitude of the reduced parameter Bϱ (where ϱ is the zero field resistivity measured between 4.2 and 112 K).