Metallurgical and electrical investigation of Pt5Ni95/silicon interactions

The interaction processes between a dilute metallic alloy of PtNi thin films of various thicknesses, ranging from 20 to 200 nm, and single crystal silicon have been investigated as a function of the annealing temperature and time. 4He+ Rutherford backscattering (RBS), Auger electron spectroscopy combined with Ar sputtering, TEM cross-section pictures and X-ray diffraction have been used to investigate the formation of the various compounds, to measure their thicknesses and to follow the segregation and redistribution processes of the Pt atoms. The forward I–V characteristics measured in Schottky diodes at various temperatures down to 100 K on samples annealed at selected temperature-time couples allow us to infer the composition and the uniformity of the silicon/silicide interface.