Structure and electrical properties of thin copper films deposited by MOCVD

A low temperature CVD process for the blanket deposition of copper films using the metalorganic precursor Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane (Cu(hfac)TMVS, CupraSelect™) was developed and tested on different substrate materials. A liquid delivery system was applied for the dosage of the precursor. Film properties were determined by four-point probe, surface profilometer and scanning electron microscope (SEM). Deposition rates on the scale of 50 nm/min and film resistivities down to 2 μΩ · cm were obtained depending on the process conditions and the substrate.