Ohmic contacts to p-type 6H-silicon carbide

An AlTi-ohmic contact to p-type 6HSiC is described. Specific contact resistances were measured using the linear transmission line method [1] and varied between approximately 5 × 10−4 and 5 × 10−3 Ω·cm2 at room temperature. CV measurements of as-deposited contacts and those annealed at different temperatures will be presented.